Researchers from the Korea Advanced Institute of Science and Technology (KAIST) developed a flexible non-volatile resistive random access memory (RRAM) on plastic. The team used memristors integrated with high-performance single-crystal silicon transistors - which solves the problem of cell-to-cell interference while still providing the performance needed to drive the memristor cells.
This is the first time such a flexible memory is achieved, and this can be an important step towards flexible devices.
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Posted: Nov 05,2011 by Ron Mertens
